MMBFJ113 |
RFQ for MMBFJ113 Required Field |
 |
| Technical/Catalog Information | MMBFJ113 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
| Gate to Source Voltage (Vgs Max) | * |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 350mW |
| Packaging | Digi-Reel? |
| Package / Case | SOT-23 |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 1A |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Resistance - RDS(On) | 100 Ohm |
| Current Drain (Id) - Max | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBFJ113 MMBFJ113 MMBFJ113DKR ND MMBFJ113DKRND MMBFJ113DKR |
| Product | Manufacturers | Pack | D/C | |||||
| MMBFJ113 | - | SOT-23 | - |
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.
|
Symbol |
Parameter |
Value |
Units |
|
VDG |
Drain-Gate Voltage |
35 |
V |
|
VGS |
Gate-Source Voltage |
-35 |
V |
|
IGF |
Forward Gate Current |
50 |
mA |
|
TJ ,Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
